Invention Grant
- Patent Title: Semiconductor light emitting device, light emitting module, lighting apparatus and display element
- Patent Title (中): 半导体发光装置，发光模块，照明装置和显示元件
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Application No.: US13651101Application Date: 2012-10-12
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Publication No.: US08692285B2Publication Date: 2014-04-08
- Inventor: Hideo Nagai
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Priority: JP2003-305402 20030828; JP2003-340020 20030930; JP2004-026851 20040203
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/10 ; H01L29/18 ; H01L29/205 ; H01L33/20 ; H01L33/38 ; H01L33/50 ; H01L33/62
Abstract:
A semiconductor light emitting device has a multilayer epitaxial structure for emitting light by a light emitting layer located between a first conductive layer and a second conductive layer. The multilayer epitaxial structure can be grown directly on a base substrate. A reflective layer can be provided in the multilayer epitaxial structure between the base substrate and the first conductive layer. A distributive Bragg reflector can be positioned adjacent the substrate. A surface of the multilayer epitaxial structure can be conformed to provide improved light extraction. A phosphorus film encapsulates the multilayer epitaxial structure and its respective side surfaces.
Public/Granted literature
- US20130119422A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, LIGHTING APPARATUS AND DISPLAY ELEMENT Public/Granted day:2013-05-16
Information query
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