Invention Grant
US08692295B1 Transistor with InGaAsP collector region and integrated opto-electronic devices employing same
失效
具有InGaAsP集电极区域的晶体管和采用其的集成光电子器件
- Patent Title: Transistor with InGaAsP collector region and integrated opto-electronic devices employing same
- Patent Title (中): 具有InGaAsP集电极区域的晶体管和采用其的集成光电子器件
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Application No.: US12567556Application Date: 2009-09-25
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Publication No.: US08692295B1Publication Date: 2014-04-08
- Inventor: Rajesh D. Rajavel , Stephen Thomas, III
- Applicant: Rajesh D. Rajavel , Stephen Thomas, III
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/737
Abstract:
A double heterojunction bipolar transistor on a substrate comprises a collector formed of InGaAsP, a base in contact with the collector, an emitter in contact with the base, and electrodes forming separate electrical contacts with each of the collector, base, and emitter, respectively. A device incorporates this transistor and an opto-electronic device optically coupled with the collector of the transistor to interact with light transmitted therethrough.
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