Invention Grant
- Patent Title: Semiconductor devices and manufacturing methods thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13370132Application Date: 2012-02-09
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Publication No.: US08692296B2Publication Date: 2014-04-08
- Inventor: Chun-Chang Chen , Shun-Shing Yang , Shih-Chi Fu , Wang-Pen Mo , Hung-Chang Hsieh
- Applicant: Chun-Chang Chen , Shun-Shing Yang , Shih-Chi Fu , Wang-Pen Mo , Hung-Chang Hsieh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and boone, LLP
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L21/20
Abstract:
Semiconductor devices and manufacturing methods thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece with a first region having a plurality of first features and a second region having a plurality of second features proximate the first region. The first region and the second region share a patterning overlap region disposed between the first region and the second region. The patterning overlap region includes a residue feature with an aspect ratio of about 4 or less.
Public/Granted literature
- US20130207163A1 Semiconductor Devices and Manufacturing Methods Thereof Public/Granted day:2013-08-15
Information query
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