Invention Grant
- Patent Title: Semiconductor device and method for forming the same
- Patent Title (中): 半导体装置及其形成方法
-
Application No.: US13722728Application Date: 2012-12-20
-
Publication No.: US08692321B2Publication Date: 2014-04-08
- Inventor: Seong Wan Ryu
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0089572 20120816
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device includes a trench defined by etching a semiconductor substrate including a device isolation film and an active region, an active region protruded from a side and bottom of the trench, and a gate electrode surrounding the active region simultaneously while being buried in the trench.
Public/Granted literature
- US20140048870A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2014-02-20
Information query
IPC分类:
