Invention Grant
US08692322B2 Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
有权
SGT MOSFET中的灵活Crss调整可平滑波形，并避免DC-DC应用中的EMI
- Patent Title: Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
- Patent Title (中): SGT MOSFET中的灵活Crss调整可平滑波形，并避免DC-DC应用中的EMI
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Application No.: US13539330Application Date: 2012-08-26
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Publication No.: US08692322B2Publication Date: 2014-04-08
- Inventor: Ji Pan , Daniel Ng , Anup Bhalla , Xiaobin Wang
- Applicant: Ji Pan , Daniel Ng , Anup Bhalla , Xiaobin Wang
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Bo-In Lin
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
A semiconductor power device comprises a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein the trenched gate comprising a shielding bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed in a top portion of the gate trench by an inter-electrode insulation layer. At least one of the transistor cells includes the shielding bottom electrode functioning as a source-connecting shielding bottom electrode electrically connected to a source electrode of the semiconductor power device and at least one of the transistor cells having the shielding bottom electrode functioning as a gate-connecting shielding bottom electrode electrically connected to a gate metal of the semiconductor power device.
Public/Granted literature
- US20130001683A1 FLEXIBLE CRSS ADJUSTMENT IN A SGT MOSFET TO SMOOTH WAVEFORMS AND TO AVOID EMI IN DC-DC APPLICATION Public/Granted day:2013-01-03
Information query
IPC分类:
