Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US13934759Application Date: 2013-07-03
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Publication No.: US08692331B2Publication Date: 2014-04-08
- Inventor: Masaki Okuno
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/772
Abstract:
A semiconductor device includes a gate electrode formed over a semiconductor substrate, and a sidewall spacer formed on a sidewall of the gate electrode. The sidewall spacer formed along the sidewall parallel to a gate length direction of the gate electrode has a first thickness, and the sidewall spacer formed along the sidewall parallel to a gate width direction of the gate electrode has a second thickness that is greater than the first thickness.
Public/Granted literature
- US20130292749A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2013-11-07
Information query
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