Invention Grant
US08692338B2 Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate 有权
具有形成在公共硅衬底上的CMOS电路和MEMS谐振器的微电子器件

  • Patent Title: Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate
  • Patent Title (中): 具有形成在公共硅衬底上的CMOS电路和MEMS谐振器的微电子器件
  • Application No.: US13673459
    Application Date: 2012-11-09
  • Publication No.: US08692338B2
    Publication Date: 2014-04-08
  • Inventor: Chuan-Wei WangSheng-Ta LeeHsin-Hui Hsu
  • Applicant: PixArt Imaging Inc.
  • Applicant Address: TW Hsinchu
  • Assignee: Pixart Imaging Inc.
  • Current Assignee: Pixart Imaging Inc.
  • Current Assignee Address: TW Hsinchu
  • Agent Chun-Ming Shih
  • Main IPC: H01L29/84
  • IPC: H01L29/84
Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate
Abstract:
A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.
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