Invention Grant
- Patent Title: Solid-state imaging device and method of manufacturing solid-state imaging device
- Patent Title (中): 固态成像装置及制造固态成像装置的方法
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Application No.: US13200938Application Date: 2011-10-05
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Publication No.: US08692347B2Publication Date: 2014-04-08
- Inventor: Sosuke Narisawa
- Applicant: Sosuke Narisawa
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sony Corporation
- Priority: JP2010-269176 20101202
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
A solid-state imaging device includes: a gate electrode arranged over an upper surface of a semiconductor substrate; a photoelectric conversion portion formed over the semiconductor substrate to position under the gate electrode; an overflow barrier formed over the semiconductor substrate to position in a portion other than a position facing the gate electrode in a planar direction and adjoin a side face of the photoelectric conversion portion; and a drain formed over the semiconductor substrate to adjoin a side face of the overflow barrier opposite to a side face adjoining the photoelectric conversion portion.
Public/Granted literature
- US20120139018A1 Solid-state imaging device and method of manufacturing solid-state imaging device Public/Granted day:2012-06-07
Information query
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