Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13610543Application Date: 2012-09-11
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Publication No.: US08692354B2Publication Date: 2014-04-08
- Inventor: Yasutaka Nakashiba
- Applicant: Yasutaka Nakashiba
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-102270 20090420
- Main IPC: H01L27/08
- IPC: H01L27/08

Abstract:
In a semiconductor device, a first semiconductor chip includes a first circuit and a first inductor, and a second semiconductor chip includes a second circuit and chip-side connecting terminals. An interconnect substrate is placed over the first semiconductor chip and the second semiconductor chip. The interconnect substrate includes a second inductor and substrate-side connecting terminals. The second inductor is located above the first inductor. The chip-side connecting terminals and the two substrate-side connecting terminals are connected through first solder balls.
Public/Granted literature
- US20130001742A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-03
Information query
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