Invention Grant
- Patent Title: Minute capacitance element and semiconductor device using the same
- Patent Title (中): 分钟电容元件和使用其的半导体器件
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Application No.: US12958478Application Date: 2010-12-02
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Publication No.: US08692355B2Publication Date: 2014-04-08
- Inventor: Daisuke Tanaka , Hiroyoshi Ichikura
- Applicant: Daisuke Tanaka , Hiroyoshi Ichikura
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, PLC
- Priority: JP2009-290705 20091222
- Main IPC: H01L25/00
- IPC: H01L25/00

Abstract:
A minute capacitance element has a high accuracy capacitance and is resistant to external noises. The minute capacitance element includes: first and second metal electrodes having respective opposite facets facing each other formed on an insulator layer to define a first gap therebetween; and a shield electrode being connectable to an externally applied potential and formed on the insulator layer within the first gap to define a slit confining a synthetic capacitance.
Public/Granted literature
- US20110148516A1 MINUTE CAPACITANCE ELEMENT AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2011-06-23
Information query
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