Invention Grant
- Patent Title: Semiconductor wafer and processing method therefor
- Patent Title (中): 半导体晶片及其加工方法
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Application No.: US13326303Application Date: 2011-12-14
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Publication No.: US08692357B2Publication Date: 2014-04-08
- Inventor: Xianjie Ning
- Applicant: Xianjie Ning
- Applicant Address: CN
- Assignee: Semiconductor Mnaufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Mnaufacturing International (Beijing) Corporation
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201110278871 20110920
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L29/06 ; H01L21/00
Abstract:
A semiconductor wafer and a method which are capable of reducing chippings or cracks generated during the die sawing process. The semiconductor wafer comprises a plurality of dies formed on the semiconductor wafer in row and column directions and separated from each other by scribe lane areas, and a passivation layer formed on the plurality of dies and the scribe lane areas, wherein a groove structure is formed in the passivation layer. The groove structure includes grooves formed along the scribe lane areas, and corners of the passivation layer at intersections of the grooves being removed.
Public/Granted literature
- US20130069205A1 SEMICONDUCTOR WAFER AND PROCESSING METHOD THEREFOR Public/Granted day:2013-03-21
Information query
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