Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13389234Application Date: 2010-08-06
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Publication No.: US08692364B2Publication Date: 2014-04-08
- Inventor: Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori , Shintaro Yamamichi
- Applicant: Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori , Shintaro Yamamichi
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-184997 20090807
- International Application: PCT/JP2010/063386 WO 20100806
- International Announcement: WO2011/016555 WO 20110210
- Main IPC: H01L23/06
- IPC: H01L23/06 ; H01L23/48 ; H01L23/02 ; H01L23/522 ; H01L21/4763 ; H01L21/48

Abstract:
A semiconductor device includes an embedding layer in which one or more semiconductor element(s) is embedded and one or more interconnect layers as well as one or more insulation layers on one or both sides of the embedding layer. The embedding layer includes a woven cloth formed by reinforcement fibers. The woven cloth has an opening on its site embedding the semiconductor element. The opening is arranged so that direction of the reinforcement fibers will have a preset angle with respect to a direction of a side of or a tangent to at least a portion of the opening, the preset angle being other than a square angle or a zero angle (parallelism).
Public/Granted literature
- US20120133052A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-05-31
Information query
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