Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13463071Application Date: 2012-05-03
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Publication No.: US08692376B2Publication Date: 2014-04-08
- Inventor: Jung Geun Kim , Whee Won Cho , Eun Soo Kim
- Applicant: Jung Geun Kim , Whee Won Cho , Eun Soo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0042856 20110506
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A method of manufacturing a semiconductor device includes forming an interlayer dielectric layer, forming trenches by etching the interlayer dielectric layer, forming a copper (Cu) layer to fill the trenches, and implanting at least one of an inert element, a nonmetallic element, and a metallic element onto a surface of the Cu layer.
Public/Granted literature
- US20120280397A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-11-08
Information query
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