Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13231856Application Date: 2011-09-13
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Publication No.: US08692383B2Publication Date: 2014-04-08
- Inventor: Soshi Kuroda , Kenya Hironaga , Hironori Matsushima , Masatoshi Yasunaga , Akira Yamazaki
- Applicant: Soshi Kuroda , Kenya Hironaga , Hironori Matsushima , Masatoshi Yasunaga , Akira Yamazaki
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Coporation
- Current Assignee: Renesas Electronics Coporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-204225 20100913; JP2011-100473 20110428
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
To achieve a reduction in cost of a semiconductor device, in a common board (a wiring board), a plurality of bonding leads each extend toward the center of the board, and a solder resist film as a die bonding region supporting a minimum chip is coated with a die bonding material. With this, even when a first semiconductor chip as a large chip is mounted, wire bonding can be performed without causing the die bonding material to cover the bonding leads. Thus, development cost can be reduced to reduce the cost of the semiconductor device (LGA).
Public/Granted literature
- US20120061850A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-03-15
Information query
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