Invention Grant
- Patent Title: Semiconductor device with through silicon via and alignment mark
- Patent Title (中): 半导体器件带硅通孔和对准标记
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Application No.: US13427960Application Date: 2012-03-23
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Publication No.: US08692384B2Publication Date: 2014-04-08
- Inventor: Nobuyuki Nakamura
- Applicant: Nobuyuki Nakamura
- Agency: Young & Thompson
- Priority: JP2011-086330 20110408
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.
Public/Granted literature
- US20120256300A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2012-10-11
Information query
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