Invention Grant
US08692384B2 Semiconductor device with through silicon via and alignment mark 有权
半导体器件带硅通孔和对准标记

  • Patent Title: Semiconductor device with through silicon via and alignment mark
  • Patent Title (中): 半导体器件带硅通孔和对准标记
  • Application No.: US13427960
    Application Date: 2012-03-23
  • Publication No.: US08692384B2
    Publication Date: 2014-04-08
  • Inventor: Nobuyuki Nakamura
  • Applicant: Nobuyuki Nakamura
  • Agency: Young & Thompson
  • Priority: JP2011-086330 20110408
  • Main IPC: H01L23/48
  • IPC: H01L23/48
Semiconductor device with through silicon via and alignment mark
Abstract:
A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.
Information query
Patent Agency Ranking
0/0