Invention Grant
US08692386B2 Semiconductor device, method of manufacturing semiconductor device, and electronic device
有权
半导体装置，半导体装置的制造方法以及电子装置
- Patent Title: Semiconductor device, method of manufacturing semiconductor device, and electronic device
- Patent Title (中): 半导体装置，半导体装置的制造方法以及电子装置
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Application No.: US13327120Application Date: 2011-12-15
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Publication No.: US08692386B2Publication Date: 2014-04-08
- Inventor: Toshiya Akamatsu
- Applicant: Toshiya Akamatsu
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2011-017405 20110131
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device includes a semiconductor element and an electronic element. The semiconductor element has a first protruding electrode, and the electronic element has a second protruding electrode. A substrate is disposed between the semiconductor element and the electronic element. The substrate has a through-hole in which the first and second protruding electrodes are fitted. The first and second protruding electrodes are connected together inside the through-hole of the substrate.
Public/Granted literature
- US20120193782A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2012-08-02
Information query
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