Invention Grant
- Patent Title: Piezoelectric device and manufacturing method therefor
- Patent Title (中): 压电器件及其制造方法
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Application No.: US13417698Application Date: 2012-03-12
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Publication No.: US08692440B2Publication Date: 2014-04-08
- Inventor: Toshimasa Tsuda
- Applicant: Toshimasa Tsuda
- Applicant Address: JP Tokyo
- Assignee: Nihon Dempa Kogyo Co., Ltd.
- Current Assignee: Nihon Dempa Kogyo Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Agent Scott D. Wofsy; Christopher J. Capelli
- Priority: JP2011-076577 20110330; JP2011-285386 20111227
- Main IPC: H01L41/08
- IPC: H01L41/08

Abstract:
A manufacturing method, which realizes general versatility of an external connection terminal by reducing deterioration of characteristics and a decrease in yield rate of a piezoelectric device in an external connection terminal forming process, and a piezoelectric device manufactured by this method are provided. Before a piezoelectric device is sealed together with a ceiling layer to form a package, an electrode structure serving as an external connection terminal is provided beforehand on a substrate mounted with a key area of the device, and after formation of the key area of the device, the piezoelectric device is sealed and packaged together with the ceiling layer. The piezoelectric device of the present invention can accommodate a three-dimensional structure by providing a rewiring layer on a principal surface of the substrate.
Public/Granted literature
- US20120248933A1 PIEZOELECTRIC DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2012-10-04
Information query
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