Invention Grant
- Patent Title: Semiconductor element driving circuit and semiconductor device
- Patent Title (中): 半导体元件驱动电路和半导体器件
-
Application No.: US13349147Application Date: 2012-01-12
-
Publication No.: US08692589B2Publication Date: 2014-04-08
- Inventor: Daisuke Hirata
- Applicant: Daisuke Hirata
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-117820 20110526
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00

Abstract:
A driving circuit outputs an output voltage as a driving signal to the gate of a semiconductor element based on a control signal given from an input circuit. The output voltage is at “H” (ON level) if it is determined by a power supply voltage VCC, and is at “L” (OFF level) if it is determined by a ground voltage GND. A reference power supply section includes a series connection of resistors. The reference power supply section obtains a voltage determined by dividing a potential difference between the power supply voltage VCC and the ground voltage GND by a predetermined dividing ratio (resistance ratio between the resistors) as a reference voltage. A buffer circuit applies an output voltage as a reference signal determined by the reference voltage to the source of the semiconductor element.
Public/Granted literature
- US20120299634A1 SEMICONDUCTOR ELEMENT DRIVING CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2012-11-29
Information query