Invention Grant
- Patent Title: Projection objective for a microlithographic EUV projection exposure apparatus
- Patent Title (中): 微光EUV投影曝光设备的投影目标
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Application No.: US12904513Application Date: 2010-10-14
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Publication No.: US08693098B2Publication Date: 2014-04-08
- Inventor: Siegfried Rennon , Hans-Juergen Mann , Thomas Schicketanz
- Applicant: Siegfried Rennon , Hans-Juergen Mann , Thomas Schicketanz
- Applicant Address: DE Oberkochen
- Assignee: Carl Zeiss SMT GmbH
- Current Assignee: Carl Zeiss SMT GmbH
- Current Assignee Address: DE Oberkochen
- Agency: Fish & Richardson P.C.
- Priority: DE102009049640 20091015
- Main IPC: G02B5/08
- IPC: G02B5/08 ; G02B1/10 ; G02B5/00
Abstract:
A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light.
Public/Granted literature
- US20110090559A1 PROJECTION OBJECTIVE FOR A MICROLITHOGRAPHIC EUV PROJECTION EXPOSURE APPARATUS Public/Granted day:2011-04-21
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