Invention Grant
- Patent Title: Wordline-to-wordline stress configuration
- Patent Title (中): 字线到字线应力配置
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Application No.: US13340437Application Date: 2011-12-29
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Publication No.: US08693259B2Publication Date: 2014-04-08
- Inventor: Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
- Applicant: Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Brinks Gilson & Lione
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A method and system for performing wordline-to-wordline stress routines on a storage device is disclosed. Stress routines may be performed to reduce state widening in multi-level memory cells in the storage device. However, data retention problems may result if the stress routines are performed too often. In order to perform the stress routines at the proper times, a stress control variable is used. The stress control variable may be indicative of age of the storage device (such as the number of erase cycles performed on a memory block in the storage device). The stress control variable is input to a look-up table (or other logical construct), with the output of the look-up table indicating whether to perform the wordline-to-wordline stress routine. In this way, the stress routines may be performed to reduce state widening while reducing the ill effects of data retention.
Public/Granted literature
- US20130170301A1 Wordline-to-Wordline Stress Configuration Public/Granted day:2013-07-04
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