Invention Grant
- Patent Title: Reference averaging for MRAM sense amplifiers
- Patent Title (中): MRAM读出放大器的参考平均
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Application No.: US13345116Application Date: 2012-01-06
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Publication No.: US08693273B2Publication Date: 2014-04-08
- Inventor: Perng-Fei Yuh , Po-Kang Wang , Lejan Pu
- Applicant: Perng-Fei Yuh , Po-Kang Wang , Lejan Pu
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11C7/02
- IPC: G11C7/02

Abstract:
A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.
Public/Granted literature
- US20130176773A1 Reference Averaging for MRAM Sense Amplifiers Public/Granted day:2013-07-11
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