Invention Grant
- Patent Title: Method for transferring a thin layer by proton exchange
- Patent Title (中): 通过质子交换传输薄层的方法
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Application No.: US12937945Application Date: 2009-04-10
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Publication No.: US08693835B2Publication Date: 2014-04-08
- Inventor: Aurélie Tauzin , Jean-Sébastien Moulet
- Applicant: Aurélie Tauzin , Jean-Sébastien Moulet
- Applicant Address: FR Paris FR Bernin
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,S.O.I. Tec Silicon on Insulator Technologies
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,S.O.I. Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Paris FR Bernin
- Agency: Brinks Gilson & Lione
- Priority: FR0852510 20080415
- International Application: PCT/FR2009/050647 WO 20090410
- International Announcement: WO2009/136100 WO 20091112
- Main IPC: G02B6/10
- IPC: G02B6/10

Abstract:
A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
Public/Granted literature
- US20110030889A1 METHOD FOR TRANSFERRING A THIN LAYER BY PROTON EXCHANGE Public/Granted day:2011-02-10
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