Invention Grant
US08694716B2 Method for writing and reading data in an electrically erasable and programmable nonvolatile memory
有权
在电可擦除和可编程的非易失性存储器中写入和读取数据的方法
- Patent Title: Method for writing and reading data in an electrically erasable and programmable nonvolatile memory
- Patent Title (中): 在电可擦除和可编程的非易失性存储器中写入和读取数据的方法
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Application No.: US12604175Application Date: 2009-10-22
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Publication No.: US08694716B2Publication Date: 2014-04-08
- Inventor: Marco Bildgen , Juergen Boehler
- Applicant: Marco Bildgen , Juergen Boehler
- Applicant Address: NL Amsterdam DE Grassbrunn
- Assignee: STMicroelectronics International N.V.,STMicroelectronics Design and Application GmbH
- Current Assignee: STMicroelectronics International N.V.,STMicroelectronics Design and Application GmbH
- Current Assignee Address: NL Amsterdam DE Grassbrunn
- Agency: Seed IP Law Group PLLC
- Priority: EP08358013 20081023
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A method for writing and reading data in a main nonvolatile memory having target pages in which data are to be written and read, the method including providing a nonvolatile buffer having an erased area, providing a volatile cache memory, and receiving a write command to update a target page with updating data the length of which can be lower than the length of a page. The method also includes, in response to the write command, writing the updating data into the erased area of the nonvolatile buffer, together with management data of a first type, and recording an updated version of the target page in the cache memory or updating in the cache memory a previously updated version of the target page.
Public/Granted literature
- US20100106896A1 METHOD FOR WRITING AND READING DATA IN AN ELECTRICALLY ERASABLE AND PROGRAMMABLE NONVOLATILE MEMORY Public/Granted day:2010-04-29
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