Invention Grant
US08694716B2 Method for writing and reading data in an electrically erasable and programmable nonvolatile memory 有权
在电可擦除和可编程的非易失性存储器中写入和读取数据的方法

Method for writing and reading data in an electrically erasable and programmable nonvolatile memory
Abstract:
A method for writing and reading data in a main nonvolatile memory having target pages in which data are to be written and read, the method including providing a nonvolatile buffer having an erased area, providing a volatile cache memory, and receiving a write command to update a target page with updating data the length of which can be lower than the length of a page. The method also includes, in response to the write command, writing the updating data into the erased area of the nonvolatile buffer, together with management data of a first type, and recording an updated version of the target page in the cache memory or updating in the cache memory a previously updated version of the target page.
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