Invention Grant
US08694720B2 Nonvolatile memory devices with page flags, methods of operation and memory systems including same
有权
具有页面标志的非易失性存储器件，操作方法和包括其的存储器系统
- Patent Title: Nonvolatile memory devices with page flags, methods of operation and memory systems including same
- Patent Title (中): 具有页面标志的非易失性存储器件，操作方法和包括其的存储器系统
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Application No.: US13337695Application Date: 2011-12-27
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Publication No.: US08694720B2Publication Date: 2014-04-08
- Inventor: Ji-Sang Lee , Joonsuc Jang , Sang-Hyun Joo
- Applicant: Ji-Sang Lee , Joonsuc Jang , Sang-Hyun Joo
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0023539 20110316
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A method programming multi-bit data to multi-level non-volatile memory cells (MLC) includes; programming a first page of data to the MLC, programming a first page flag to an initial first flag state in response in the programming of the first page, programming a second page of data to the MLC, in response to programming the second page, determining whether the first page has been programmed and if the first page has been programmed, programming the first page flag to a final first flag state different from the initial first flag state in response to programming of the second page, and if the first page has not been programmed, inhibiting programming of the first page flag during programming of the second page.
Public/Granted literature
- US20120239861A1 NONVOLATILE MEMORY DEVICES WITH PAGE FLAGS, METHODS OF OPERATION AND MEMORY SYSTEMS INCLUDING SAME Public/Granted day:2012-09-20
Information query
