Invention Grant
- Patent Title: Memory device repair apparatus, systems, and methods
- Patent Title (中): 内存设备维修设备，系统和方法
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Application No.: US13593217Application Date: 2012-08-23
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Publication No.: US08694861B2Publication Date: 2014-04-08
- Inventor: Yutaka Ito , Adrian J. Drexler
- Applicant: Yutaka Ito , Adrian J. Drexler
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
Operations within a memory device to replace one or more selected failing memory cells with one or more repair memory cells and to correct data digits read from other failing memory cells in the memory device.
Public/Granted literature
- US20120324298A1 MEMORY DEVICE REPAIR APPARATUS, SYSTEMS, AND METHODS Public/Granted day:2012-12-20
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