Invention Grant
US08695207B2 Method for manufacturing an electronic device 有权
电子设备的制造方法

  • Patent Title: Method for manufacturing an electronic device
  • Patent Title (中): 电子设备的制造方法
  • Application No.: US12995797
    Application Date: 2009-05-13
  • Publication No.: US08695207B2
    Publication Date: 2014-04-15
  • Inventor: Christian Zenz
  • Applicant: Christian Zenz
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: EP08104215 20080602
  • International Application: PCT/IB2009/051964 WO 20090513
  • International Announcement: WO2009/147546 WO 20091210
  • Main IPC: H01P11/00
  • IPC: H01P11/00
Method for manufacturing an electronic device
Abstract:
In a method for manufacturing an electronic device an integrated circuit (1) is arranged between two layers (2, 3) of a substrate, said integrated circuit (1) having at least one contacting surface, a hole (4) is formed in at least one substrate layer (3) above said at least one contacting surface, a conductive structure (5) is formed on a surface of said at least one substrate layer (3) facing away from the integrated circuit (1) and said conductive structure (5) is connected to said contacting surface by means of said hole (4).
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