Invention Grant
US08696767B2 Dipping method of forming cathode of solid electrolytic capacitor 有权
固体电解电容器阴极浸渍方法

  • Patent Title: Dipping method of forming cathode of solid electrolytic capacitor
  • Patent Title (中): 固体电解电容器阴极浸渍方法
  • Application No.: US12601466
    Application Date: 2008-05-20
  • Publication No.: US08696767B2
    Publication Date: 2014-04-15
  • Inventor: Yoshinori Shibuya
  • Applicant: Yoshinori Shibuya
  • Applicant Address: JP Tokyo
  • Assignee: Showa Denko K.K.
  • Current Assignee: Showa Denko K.K.
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2007-134579 20070521
  • International Application: PCT/JP2008/059184 WO 20080520
  • International Announcement: WO2008/143234 WO 20081127
  • Main IPC: H01G9/025
  • IPC: H01G9/025
Dipping method of forming cathode of solid electrolytic capacitor
Abstract:
The present invention relates to a method to produce a solid electrolytic capacitor by forming a dielectric layer on an anode body comprising a valve-acting metal sintered body having fine pores and forming on the dielectric layer a conductive compound layer to form a cathode, wherein a cathode is formed by repeating the step of dipping the anode body into an inorganic compound solution, an organic compound solution or a conductive-polymer compound dispersion liquid which turns into a conductive compound layer to thereby laminate a conductive layer on the anode body, and the depth of the anode body to be dipped is increased with each dipping; and an apparatus to be used for the method. According to the present invention, a satisfactory cathode layer can be efficiently formed and a solid electrolytic capacitor having a large capacitance and a low equivalent series resistance can be produced.
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