Invention Grant
US08696811B2 Method for feeding arsenic dopant into a silicon crystal growing apparatus
有权
将砷掺杂剂进料到硅晶体生长装置中的方法
- Patent Title: Method for feeding arsenic dopant into a silicon crystal growing apparatus
- Patent Title (中): 将砷掺杂剂进料到硅晶体生长装置中的方法
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Application No.: US12625931Application Date: 2009-11-25
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Publication No.: US08696811B2Publication Date: 2014-04-15
- Inventor: Massoud Javidi , Steve Garner
- Applicant: Massoud Javidi , Steve Garner
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: C30B15/04
- IPC: C30B15/04
Abstract:
A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.
Public/Granted literature
- US20100132829A1 METHOD FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING APPARATUS Public/Granted day:2010-06-03
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