Invention Grant
- Patent Title: Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, and mask and submillimetric electrically conductive grid
- Patent Title (中): 用于制造具有亚毫米级导电栅格的亚毫米孔的掩模的方法,以及掩模和亚毫米级导电栅格
-
Application No.: US13120292Application Date: 2009-09-24
-
Publication No.: US08697186B2Publication Date: 2014-04-15
- Inventor: Georges Zagdoun , Bernard Nghiem , Emmanuel Valentin , Svetoslav Tchakarov
- Applicant: Georges Zagdoun , Bernard Nghiem , Emmanuel Valentin , Svetoslav Tchakarov
- Applicant Address: FR Courbevoie
- Assignee: Saint-Gobain Glass France
- Current Assignee: Saint-Gobain Glass France
- Current Assignee Address: FR Courbevoie
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: FR0856429 20080924
- International Application: PCT/FR2009/051816 WO 20090924
- International Announcement: WO2010/034945 WO 20100401
- Main IPC: B05D5/00
- IPC: B05D5/00

Abstract:
A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a first solution of colloidal nanoparticles in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer, known as the first masking layer, is carried out at a temperature below said temperature Tg until a mask having a two-dimensional network of substantially straight-edged submillimetric openings, that defines a mask zone known as a network mask zone is obtained, a solid mask zone is formed by a liquid deposition, on the face, of a second masking zone, the solid mask zone being adjacent to and in contact with the network mask zone, and/or at least one cover zone is formed, the cover zone being in contact with the network mask zone, and/or after the drying of the first masking layer, a filled mask zone is formed by filling, via a liquid route, openings of a portion of the network mask zone. The invention also relates to the mask and the electroconductive grid obtained.
Public/Granted literature
Information query