Resist coating treatments for application of a resist solution to removal of a resist film on a wafer edge portion. A laser irradiation unit applies a laser light in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. The application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion and supplies solvent to the resist film on the edge portion. The solvent dissolves and removes the resist film on the edge portion.