Invention Grant
US08697342B2 Method of modifying chemically amplified resist pattern, modifier for chemically amplified resist pattern, and resist pattern structure
失效
修饰化学放大抗蚀剂图案的方法,化学放大抗蚀剂图案的修饰剂和抗蚀剂图案结构
- Patent Title: Method of modifying chemically amplified resist pattern, modifier for chemically amplified resist pattern, and resist pattern structure
- Patent Title (中): 修饰化学放大抗蚀剂图案的方法,化学放大抗蚀剂图案的修饰剂和抗蚀剂图案结构
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Application No.: US13064130Application Date: 2011-03-08
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Publication No.: US08697342B2Publication Date: 2014-04-15
- Inventor: Ichiro Takemura , Isao Mita , Eriko Matsui , Nobuyuki Matsuzawa
- Applicant: Ichiro Takemura , Isao Mita , Eriko Matsui , Nobuyuki Matsuzawa
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2010-077731 20100330
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
Disclose herein is a method of modifying a positive-type chemically amplified resist pattern, including the steps of, applying to a surface of a resist pattern, an aqueous solution of a modifier for the positive-type chemically amplified resist pattern, the aqueous solution containing a water-soluble cross-linking agent and a penetration accelerator, the cross-linking agent and the penetration accelerator being dissolved in water or a mixed solvent containing water as a main ingredient, so as to permit the cross-linking agent to penetrate the resist pattern, removing a surplus of the cross-linking agent, and irradiating the resist pattern.
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