Invention Grant
- Patent Title: Method for treating a semiconductor
- Patent Title (中): 半导体处理方法
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Application No.: US13682876Application Date: 2012-11-21
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Publication No.: US08697480B1Publication Date: 2014-04-15
- Inventor: Donald Franklin Foust
- Applicant: General Electric Company
- Applicant Address: US AZ Tempe
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US AZ Tempe
- Agency: MacMillan, Sobanski & Todd, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.
Information query
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