Invention Grant
- Patent Title: Methods of forming phase change materials and methods of forming phase change memory circuitry
-
Application No.: US12424404Application Date: 2009-04-15
-
Publication No.: US08697486B2Publication Date: 2014-04-15
- Inventor: Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
- Applicant: Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
- Applicant Address: US ID Boise
- Assignee: Micro Technology, Inc.
- Current Assignee: Micro Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
Public/Granted literature
- US20100267195A1 Methods Of Forming Phase Change Materials And Methods Of Forming Phase Change Memory Circuitry Public/Granted day:2010-10-21
Information query
IPC分类:
