Invention Grant
- Patent Title: Module with silicon-based layer
- Patent Title (中): 模块与硅基层
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Application No.: US13281955Application Date: 2011-10-26
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Publication No.: US08697497B2Publication Date: 2014-04-15
- Inventor: Ralf Otremba , Xaver Schloegel , Christof Matthias Schilz
- Applicant: Ralf Otremba , Xaver Schloegel , Christof Matthias Schilz
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/56
- IPC: H01L21/56

Abstract:
The invention concerns a module comprising a carrier element, a semiconductor device mounted on said carrier element and a silicon-based insulating layer. The silicon-based insulating layer is arranged on the side of the carrier element opposite to the semiconductor device. The invention further concerns a module comprising a semiconductor device, a mold compound at least partly covering the semiconductor device and a silicon-based passivation layer. The silicon-based passivation layer covers at least partly the periphery of the mold compound.
Public/Granted literature
- US20120070941A1 MODULE WITH SILICON-BASED LAYER Public/Granted day:2012-03-22
Information query
IPC分类: