Invention Grant
- Patent Title: Methods of manufacturing three dimensional semiconductor memory devices using sub-plates
- Patent Title (中): 使用子板制造三维半导体存储器件的方法
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Application No.: US13284435Application Date: 2011-10-28
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Publication No.: US08697498B2Publication Date: 2014-04-15
- Inventor: Byong-hyun Jang , Dongchul Yoo , Chanjin Park , Hanmei Choi
- Applicant: Byong-hyun Jang , Dongchul Yoo , Chanjin Park , Hanmei Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0119904 20101129
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/00
Abstract:
A method of manufacturing a Three Dimensional (3D) semiconductor memory device can be provided by forming at least one trench in a plate stack structure to divide the plate stack structure into a plurality of sub-plate stack structures between forming a plurality of vertical active patterns in the plate stack structure and forming pads of a stepped structure from the plate stack structure.
Public/Granted literature
- US20120135583A1 METHODS OF MANUFACTURING THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES USING SUB-PLATES Public/Granted day:2012-05-31
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