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US08697519B2 Method of manufacturing a semiconductor device which includes forming a silicon layer without void and cutting on a silicon monolayer 有权
一种制造半导体器件的方法，包括在硅单层上形成无空隙和切割的硅层

Method of manufacturing a semiconductor device which includes forming a silicon layer without void and cutting on a silicon monolayer
Abstract:
Methods of manufacturing a semiconductor device are provided. Patterns having a recess region defined therebetween are formed on a substrate, and then a silicon precursor having an organic ligand is provided on the substrate to absorb silicon on sidewalls and a bottom surface of the recess region to form a silicon monolayer on the patterns having the recess region defined therebetween. A silicon layer without void and cutting is formed on the silicon monolayer.
Abstract(Chinese):

提供制造半导体器件的方法。 在衬底上形成具有凹陷区域的图案，然后在衬底上提供具有有机配体的硅前体，以吸收凹槽区域的侧壁和底表面上的硅，以在具有有机配体的图案上形成硅单层 凹陷区域。 在硅单层上形成无空隙和切割的硅层。

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