Invention Grant
- Patent Title: Integration of SMT in replacement gate FINFET process flow
- Patent Title (中): 集成SMT在替换栅极FINFET工艺流程
-
Application No.: US13366904Application Date: 2012-02-06
-
Publication No.: US08697523B2Publication Date: 2014-04-15
- Inventor: Ming Cai , Dechao Guo , Chun-Chen Yeh
- Applicant: Ming Cai , Dechao Guo , Chun-Chen Yeh
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A method of fabricating a FINFET includes the following steps. A plurality of fins is patterned in a wafer. A dummy gate is formed covering a portion of the fins which serves as a channel region. Spacers are formed on opposite sides of the dummy gate. The dummy gate is removed thus forming a trench between the spacers that exposes the fins in the channel region. A nitride material is deposited into the trench so as to cover a top and sidewalls of each of the fins in the channel region. The wafer is annealed to induce strain in the nitride material thus forming a stressed nitride film that covers and induces strain in the top and the sidewalls of each of the fins in the channel region of the device. The stressed nitride film is removed. A replacement gate is formed covering the fins in the channel region.
Public/Granted literature
- US20130200468A1 Integration of SMT in Replacement Gate FINFET Process Flow Public/Granted day:2013-08-08
Information query
IPC分类:
