Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13101424Application Date: 2011-05-05
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Publication No.: US08697525B2Publication Date: 2014-04-15
- Inventor: Hyung-Hwan Kim , Seong-Su Lim , Sung-Eun Park , Seung-Seok Pyo , Min-Cheol Kang
- Applicant: Hyung-Hwan Kim , Seong-Su Lim , Sung-Eun Park , Seung-Seok Pyo , Min-Cheol Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0140493 20101231
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.
Public/Granted literature
- US20120168899A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-07-05
Information query
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