Invention Grant
US08697548B2 Method for making semi-conductor nanocrystals oriented along a predefined direction
有权
制造沿预定方向取向的半导体纳米晶体的方法
- Patent Title: Method for making semi-conductor nanocrystals oriented along a predefined direction
- Patent Title (中): 制造沿预定方向取向的半导体纳米晶体的方法
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Application No.: US13464390Application Date: 2012-05-04
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Publication No.: US08697548B2Publication Date: 2014-04-15
- Inventor: Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frédéric Leroy , Denis Mariolle , Pierre Müller
- Applicant: Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frédéric Leroy , Denis Mariolle , Pierre Müller
- Applicant Address: FR Paris FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives,Centre National de la Recherche Scientifique
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives,Centre National de la Recherche Scientifique
- Current Assignee Address: FR Paris FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1153926 20110506
- Main IPC: H01L33/06
- IPC: H01L33/06 ; B82Y40/00 ; B82Y30/00
Abstract:
A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
Public/Granted literature
- US20120282759A1 METHOD FOR MAKING SEMI-CONDUCTOR NANOCRYSTALS ORIENTED ALONG A PREDEFINED DIRECTION Public/Granted day:2012-11-08
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