Invention Grant
- Patent Title: Deposition of porous films for thermoelectric applications
- Patent Title (中): 沉积用于热电应用的多孔膜
-
Application No.: US13587325Application Date: 2012-08-16
-
Publication No.: US08697549B2Publication Date: 2014-04-15
- Inventor: Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
- Applicant: Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
Public/Granted literature
- US20130045557A1 DEPOSITION OF POROUS FILMS FOR THERMOELECTRIC APPLICATIONS Public/Granted day:2013-02-21
Information query
IPC分类: