Invention Grant
- Patent Title: Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
- Patent Title (中): 结晶碳化铝薄膜，其上形成有碳化铝薄膜的半导体衬底及其制造方法
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Application No.: US13871497Application Date: 2013-04-26
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Publication No.: US08697551B2Publication Date: 2014-04-15
- Inventor: Shiro Sakai
- Applicant: Seoul Opto Device Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: JP2011-016085 20110128
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Embodiments of the invention provide a crystalline aluminum carbide thin film, a semiconductor substrate having the crystalline aluminum carbide thin film formed thereon, and a method of fabricating the same. Further, the method of fabricating the AlC thin film includes supplying a carbon containing gas and an aluminum containing gas to a furnace, to growing AlC crystals on a substrate.
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