Invention Grant
- Patent Title: Transistor structure having a trench drain
- Patent Title (中): 具有沟槽漏极的晶体管结构
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Application No.: US13535804Application Date: 2012-06-28
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Publication No.: US08697556B2Publication Date: 2014-04-15
- Inventor: Robert Bruce Davies
- Applicant: Robert Bruce Davies
- Applicant Address: US DE Dover
- Assignee: Estivation Properties LLC
- Current Assignee: Estivation Properties LLC
- Current Assignee Address: US DE Dover
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
Public/Granted literature
- US20130034952A1 TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN Public/Granted day:2013-02-07
Information query
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