Power MOSFET contact metallization

Invention Grant

US08697571B2 Power MOSFET contact metallization 有权

Title translation: 功率MOSFET接触金属化

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Patent Title: Power MOSFET contact metallization
Patent Title (中): 功率MOSFET接触金属化
Application No.: US13654230

Application Date: 2012-10-17
Publication No.: US08697571B2

Publication Date: 2014-04-15
Inventor: Ronald Wong , Jason Qi , Kyle Terrill , Kuo-In Chen
Applicant: Vishay-Siliconix
Applicant Address: US CA Santa Clara
Assignee: Vishay-Siliconix
Current Assignee: Vishay-Siliconix
Current Assignee Address: US CA Santa Clara
Main IPC: H01L21/4763
IPC: H01L21/4763

Abstract:

A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

Abstract(Chinese):

一种结构包括形成在衬底中的半导体器件; 与半导体器件相邻的绝缘体; 电接触，电耦合到所述半导体器件，其中所述电接触包括钨; 以及耦合到所述电触点的电连接器，其中所述电连接器包括铝。绝缘体的表面和电接触的表面形成基本均匀的表面。

Public/Granted literature

US20130040457A1 POWER MOSFET CONTACT METALLIZATION Public/Granted day:2013-02-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）