Invention Grant
- Patent Title: Method for forming Cu film and storage medium
- Patent Title (中): 形成Cu膜和储存介质的方法
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Application No.: US13211870Application Date: 2011-08-17
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Publication No.: US08697572B2Publication Date: 2014-04-15
- Inventor: Yasuhiko Kojima , Kenji Hiwa
- Applicant: Yasuhiko Kojima , Kenji Hiwa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-034069 20090217
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac)2 produced as a by-product during the film formation. When the CVD-Cu film is formed, the pressure within the chamber 1 is controlled to a pressure at which the desorption and diffusion of Cu(hfac)2 adsorbed on the surface of the CVD Ru film proceed.
Public/Granted literature
- US20120028462A1 METHOD FOR FORMING CU FILM AND STORAGE MEDIUM Public/Granted day:2012-02-02
Information query
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