Invention Grant
- Patent Title: Photovoltaic device with double-junction
- Patent Title (中): 具有双结的光伏器件
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Application No.: US13037508Application Date: 2011-03-01
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Publication No.: US08697986B2Publication Date: 2014-04-15
- Inventor: Ming-Jeng Huang , Han-Tu Lin
- Applicant: Ming-Jeng Huang , Han-Tu Lin
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Morris Manning & Martin LLP
- Agent Tim Tingkang Xia, Esq.
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L27/142 ; H01L31/0352

Abstract:
The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.
Public/Granted literature
- US20120222729A1 PHOTOVOLTAIC DEVICE WITH DOUBLE-JUNCTION Public/Granted day:2012-09-06
Information query
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