Invention Grant
- Patent Title: Semiconductor MOS entrance window for radiation detectors
- Patent Title (中): 半导体MOS入射窗用于辐射探测器
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Application No.: US13325709Application Date: 2011-12-14
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Publication No.: US08698091B2Publication Date: 2014-04-15
- Inventor: Keith W. Decker , Derek Hullinger , Mark Alan Davis
- Applicant: Keith W. Decker , Derek Hullinger , Mark Alan Davis
- Applicant Address: US UT Orem
- Assignee: Moxtek, Inc.
- Current Assignee: Moxtek, Inc.
- Current Assignee Address: US UT Orem
- Agency: Thorpe North & Western LLP
- Priority: JP2009-157627 20090702
- Main IPC: G01T1/24
- IPC: G01T1/24
Abstract:
A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate.
Public/Granted literature
- US20120313195A1 SEMICONDUCTOR MOS ENTRANCE WINDOW FOR RADIATION DETECTORS Public/Granted day:2012-12-13
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