Invention Grant
US08698153B2 Semiconductor device and process for production thereof 有权
半导体装置及其制造方法

  • Patent Title: Semiconductor device and process for production thereof
  • Patent Title (中): 半导体装置及其制造方法
  • Application No.: US13703696
    Application Date: 2011-06-21
  • Publication No.: US08698153B2
    Publication Date: 2014-04-15
  • Inventor: Katsunori Misaki
  • Applicant: Katsunori Misaki
  • Applicant Address: JP Osaka
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka
  • Agency: Keating & Bennett, LLP
  • Priority: JP2010-144049 20100624
  • International Application: PCT/JP2011/064140 WO 20110621
  • International Announcement: WO2011/162242 WO 20111229
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Semiconductor device and process for production thereof
Abstract:
The TFT substrate (100A) in the present invention includes a thin film transistor, a gate line (3a), a source line (13as), and first and second terminals (40a, 40b) for electrically connecting the thin film transistor to an external wiring which are formed on a substrate (1). The first terminal includes a first gate terminal portion (41a) and a first pixel electrode line (29a). The first pixel electrode line is in contact with the first gate terminal portion in a first opening portion (27c) provided in an insulating film (5), and covers an end face of the insulating film in the first opening portion. The second terminal includes a second gate terminal portion (41b) and a second pixel electrode line (29b). The second pixel electrode line is in contact with the second gate terminal portion in a second opening portion (27d) provided in the insulating film, and covers an end face of the insulating film in the second opening portion.
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