Invention Grant
US08698168B2 Semiconductor device having aluminum nitride layer with void formed therein
有权
其中形成有空隙的氮化铝层的半导体器件
- Patent Title: Semiconductor device having aluminum nitride layer with void formed therein
- Patent Title (中): 其中形成有空隙的氮化铝层的半导体器件
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Application No.: US13039978Application Date: 2011-03-03
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Publication No.: US08698168B2Publication Date: 2014-04-15
- Inventor: Yoshihiro Ueta , Masataka Ohta , Yoshinobu Aoyagi , Misaichi Takeuchi
- Applicant: Yoshihiro Ueta , Masataka Ohta , Yoshinobu Aoyagi , Misaichi Takeuchi
- Applicant Address: JP Osaka-shi, Osaka JP Kyoto-shi, Kyoto
- Assignee: Sharp Kabushiki Kaisha,The Ritsumeikan Trust
- Current Assignee: Sharp Kabushiki Kaisha,The Ritsumeikan Trust
- Current Assignee Address: JP Osaka-shi, Osaka JP Kyoto-shi, Kyoto
- Agency: Morrison & Foerster LLP
- Priority: JP2010-155388 20100708; JP2011-042479 20110228
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).
Public/Granted literature
- US20120007039A1 CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE Public/Granted day:2012-01-12
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