Invention Grant
- Patent Title: Feature patterning methods and structures thereof
- Patent Title (中): 特征图案化方法及其结构
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Application No.: US13096802Application Date: 2011-04-28
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Publication No.: US08698206B2Publication Date: 2014-04-15
- Inventor: Thomas Schulz , Sergei Postnikov
- Applicant: Thomas Schulz , Sergei Postnikov
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/10
- IPC: H01L27/10
Abstract:
Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.
Public/Granted literature
- US20110215479A1 Feature Patterning Methods and Structures Thereof Public/Granted day:2011-09-08
Information query
IPC分类:
