Invention Grant
- Patent Title: Pressure-sensitive amplifier stage
- Patent Title (中): 压敏放大器级
-
Application No.: US13367789Application Date: 2012-02-07
-
Publication No.: US08698213B2Publication Date: 2014-04-15
- Inventor: Wolfgang Buesser
- Applicant: Wolfgang Buesser
- Applicant Address: DE Dortmund
- Assignee: ELMOS Semiconductor AG
- Current Assignee: ELMOS Semiconductor AG
- Current Assignee Address: DE Dortmund
- Agency: Renner, Otto, Boisselle * Sklar, LLP
- Priority: EP11153549 20110207
- Main IPC: G01L1/00
- IPC: G01L1/00

Abstract:
Pressure-sensitive amplifier stage comprising four unipolar pressure-sensor transistors each including a piezoresistive current path. The pressure-sensor transistors are connected as a pressure-measuring bridge having two bridge legs each comprising first and second pressure-sensor transistors which are connected in series. Two unipolar control transistors each has a control terminal and a current path arranged between a further first and a further second terminal. The respective first and second terminals of the two control transistors are connected in pairs, and the control terminals each is connected to a node between the pressure-sensor transistors. The interconnected second terminals are connected to the control terminals of the second pressure-sensor transistors of the two bridge legs. The control terminals of the first pressure-sensor transistors are adapted for connection thereto of a respective operating input voltage, and a measurement output voltage is detectable between the pressure-sensor transistors.
Public/Granted literature
- US20120198946A1 PRESSURE-SENSITIVE AMPLIFIER STAGE Public/Granted day:2012-08-09
Information query